The importance of being homogeneous: on the influence of illumination inhomogeneity on AIMS images

Defect disposition and qualification with stepper simulating AIMSTM tools on advanced masks of the 90 nm node and below is key to match the customer's expectations for "defect free" masks, i.e. masks containing only nonprinting design variations. For defect dispositioning usually printability studies are carried out using the same illumination settings at the AIMSTM tool as later on at the steppers in the wafer fab. These studies then establish an AIMSTM criterion (e.g., CD variation or transmission deviation) a structure deviation must not exceed. For ever more advanced technologies the accessible process window gets smaller and thus more and more complex apertures have to be used to allow for a still suitable contrast and reliable printing of the patterns. This results in more time-consuming printability studies and tighter AIMSTM specs. Simulations of the printing of mask defects could potentially help to decrease the amount of time for printability studies and also the time for defect disposition in the production. However, usually simulations in their first approximation do not account for effects such as flare, aberrations or illumination inhomogeneities of the AIMSTM tool. This makes it difficult to derive the AIMSTM criterion by simulations. In this paper we show that a homogeneous aperture illumination is crucial for the image contrast and the defect disposition. We present a method to characterize the pupil illumination and investigate the impact of illumination inhomogeneities on various structures and their orientation employing two different aperture types. The experimental results are compared to simulations with both homogeneous illumination and the real illumination distribution. It turns out that for correct simulation predictions on experimental results it is important to provide the correct illumination distribution to the simulations.

[1]  Karsten Gutjahr,et al.  Defect printability and inspectability of halftone masks for the 90nm and 70nm node , 2005, Other Conferences.

[2]  Vicky Philipsen,et al.  Printability of hard and soft defects in 193-nm lithography , 2002, European Mask and Lithography Conference.

[3]  Derek B. Dove,et al.  New tool for phase-shift mask evaluation: the stepper equipment aerial image measurement system--AIMS , 1994, Photomask Technology.

[4]  Alfred Kwok-Kit Wong,et al.  Resolution enhancement techniques in optical lithography , 2001 .

[5]  Shinji Akima,et al.  Phase defect printability and mask inspection capability of 65-nm technology node Alt-PSM for ArF lithography (Photomask Japan Best Paper) , 2004, SPIE Photomask Technology.

[6]  Iwao Higashikawa,et al.  First results from AIMS beta tool for 157-nm lithography , 2004, SPIE Advanced Lithography.

[7]  Andreas Erdmann,et al.  Mask modeling in the low k1 and ultrahigh NA regime: phase and polarization effects (Invited Paper) , 2005, Other Conferences.

[8]  Vicky Philipsen,et al.  Extended Defect Printability Study for 100nm Design Rule using 193 nm Lithography , 2002, Photomask Technology.

[9]  J. Heumann,et al.  Defect printability and inspectability of Cr-less phase-shift masks for the 70nm node , 2004, SPIE Advanced Lithography.

[10]  Martin McCallum,et al.  Deducing aerial image behavior from AIMS data , 2000, Advanced Lithography.

[11]  Lars W. Liebmann,et al.  Application of the aerial image measurement system (AIMS)TM to the analysis of binary mask imaging and resolution enhancement techniques , 1994, Advanced Lithography.

[12]  Chris A. Mack,et al.  PRIMADONNA: a system for automated defect disposition of production masks using wafer lithography simulation , 2002, Photomask Technology.

[13]  Christopher A. Spence,et al.  Evaluation of 3D alternating PSM structures using mask topography simulation, and AIMS at λ=193nm , 2001, SPIE Advanced Lithography.

[14]  Haiqing Zhou,et al.  A study of defect measurement techniques and corresponding effects on the lithographic process window for a 193-nm EPSM photomask , 2003, SPIE Photomask Technology.

[15]  John S. Petersen Optical proximity strategies for desensitizing lens aberrations , 2001, Microelectronic and MEMS Technologies.

[16]  Roderick Koehle,et al.  Fourier analysis of AIMS images for mask characterization , 2003, Photomask Japan.

[17]  Andreas Erdmann Process optimization using lithography simulation , 2004, International Conference on Micro- and Nano-Electronics.

[18]  Syed A. Rizvi,et al.  The AIMS tool: its potentials, applications, and issues , 1998, Photomask Technology.

[19]  Martin Sczyrba,et al.  Aerial image based mask defect detection in dense array structures , 2005, Photomask Japan.