论文信息 - Electrical properties of 100 nm pitch Cr/Au fine electrodes with 40 nm width on GaInAs toward hot electron interference/diffraction devices - 字舞流文

Electrical properties of 100 nm pitch Cr/Au fine electrodes with 40 nm width on GaInAs toward hot electron interference/diffraction devices

Y. Miyamoto | K. Furuya | H. Hongo | Hiroaki Tanaka | J. Yoshinaga | Toshihiko Otake

[1] Shinji Matsui,et al. Ultrahigh resolution of calixarene negative resist in electron beam lithography , 1996 .

[2] M. Suhara,et al. Nanostructure Alignment for Hot Electron Interference/Diffraction Devices. , 1995 .

[3] Y. Miyamoto,et al. Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices , 1994 .

[4] K. Furuya. Novel high‐speed transistor using electron‐wave diffraction , 1987 .