7-Transistor 2-memristor based non-volatile static random access memory cell design

Emerging chip technologies employ power-off mode to reduce the power dissipation of chips. Non-volatile SRAM (nvSRAM) enables a chip to store the data after power-off mode. This non-volatility can be achieved through memristor memory technology which is a promising emerging technology with unique properties such as high density, low-power and good-scalability. This paper provides a detailed study of memristor and proposes a memristor based 7T2M nvSRAM cell. This cell incorporates two memristors, which store the bit information present in the 6T SRAM cell, and a 1T switch, which helps to restore the previously written bit in situations of power supply failures, thereby making the SRAM non-volatile.

[1]  Meng-Fan Chang,et al.  Low Store Energy, Low VDDmin, 8T2R Nonvolatile Latch and SRAM With Vertical-Stacked Resistive Memory (Memristor) Devices for Low Power Mobile Applications , 2012, IEEE Journal of Solid-State Circuits.

[2]  Mohd. Hasan,et al.  A technique to mitigate impact of process, voltage and temperature variations on design metrics of SRAM Cell , 2012, Microelectron. Reliab..

[3]  Jim Hutchby,et al.  Assessment of the Potential & Maturity of Selected Emerging Research Memory Technologies Workshop & ERD/ERM Working Group Meeting (April 6-7, 2010) , 2010 .

[4]  Fernando Corinto,et al.  Nonlinear Dynamics of Memristor Oscillators , 2011, IEEE Transactions on Circuits and Systems I: Regular Papers.

[5]  Krishnamurthy Murali,et al.  Effect of sinusoidal excitation on the Chua's circuit , 1992 .

[6]  Peng Li,et al.  Dynamical Properties and Design Analysis for Nonvolatile Memristor Memories , 2011, IEEE Transactions on Circuits and Systems I: Regular Papers.

[7]  L.O. Chua,et al.  Memristive devices and systems , 1976, Proceedings of the IEEE.

[8]  M. Hasan,et al.  Leakage Characterization of 10T SRAM Cell , 2012, IEEE Transactions on Electron Devices.

[9]  Wei Yang Lu,et al.  Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.

[10]  L. Chua Memristor-The missing circuit element , 1971 .

[11]  Gregory S. Snider,et al.  ‘Memristive’ switches enable ‘stateful’ logic operations via material implication , 2010, Nature.

[12]  K. Roy,et al.  A 160 mV Robust Schmitt Trigger Based Subthreshold SRAM , 2007, IEEE Journal of Solid-State Circuits.

[13]  S. Dasgupta,et al.  Device and Circuit Co-Design Robustness Studies in the Subthreshold Logic for Ultralow-Power Applications for 32 nm CMOS , 2010, IEEE Transactions on Electron Devices.

[14]  H. Fujiwara,et al.  Which is the best dual-port SRAM in 45-nm process technology? — 8T, 10T single end, and 10T differential — , 2008, 2008 IEEE International Conference on Integrated Circuit Design and Technology and Tutorial.