Modulation properties of a near travelling-wave semiconductor laser amplifier

The amplitude and phase or frequency modulation properties for pump current modulation of a near travelling-wave semiconductor laser amplifier are examined. The investigations are performed numerically in the time domain with large-signal analysis and in the frequency domain with small-signal analysis. It is shown that the modulation bandwidth is increased by high pump current or high input power and that the small-signal modulation efficiency is increased by low pump current or low input power. The validity of the simulations is supported by experimental results. >