A temperature model for the GaAs MESFET

This paper describes a new two-dimensional method for study of GaAs Schottky-barrier MESFET's. A modified form of the conduction current is used in which transport properties are described in terms of electron temperature rather than electric field. Nonequilibrium velocity effects such as velocity overshoot are included. Results for the one-dimensional GaAs diode and the two-dimensional GaAs MESFET are presented and compared to other studies that utilize the Monte Carlo procedure. Larger values of current cut-off frequency are predicted for submicrometer gate length MESFET's than in previous two-dimensional simulations which utilize the steady-state transport properties.

[1]  M. Reiser,et al.  A two-dimensional numerical FET model for DC, AC, and large-signal analysis , 1973 .

[2]  R. Stratton,et al.  Diffusion of Hot and Cold Electrons in Semiconductor Barriers , 1962 .

[3]  Michael S. Shur,et al.  Influence of nonuniform field distribution on frequency limits of GaAs field-effect transistors , 1976 .

[4]  Richard B. Fair.  Graphical design and iterative analysis of the DC parameters of GaAs FET's , 1974 .

[5]  K. Blotekjaer.  Transport equations for electrons in two-valley semiconductors , 1970 .

[6]  Yen-Chu Wang,et al.  Velocity overshoot effect on a short-gate microwave MESFET , 1979 .

[7]  K. Yokoo,et al.  An analysis of wide-band transferred electron devices , 1978, IEEE Transactions on Electron Devices.

[8]  J. G. Ruch,et al.  Electron dynamics in short channel field-effect transistors , 1972 .

[9]  R. R. O'Brien,et al.  Computer aided two-dimensional analysis of the junction field-effect transistor , 1970 .

[10]  M. Reiser,et al.  Two-dimensional particle models in semiconductor-device analysis , 1974 .

[11]  P. H. Ladbrooke,et al.  The physics of excess electron velocity in submicron‐channel FET’s , 1977 .

[12]  J. Frey,et al.  Physical basis of short-channel MESFET operation , 1979 .

[13]  T. Maloney,et al.  Transient and steady‐state electron transport properties of GaAs and InP , 1977 .

[14]  A. G. Chynoweth,et al.  Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductors , 1966 .