论文信息 - Analysis and design of dickson charge pump for EEPROM in 180nm CMOS technology

Analysis and design of dickson charge pump for EEPROM in 180nm CMOS technology

This paper presents an analysis and design of Dickson charge pump for EEPROM in 180 nm CMOS technology. The new Dickson Charge Pump is the security sub chip to encrypts/decrypts the data, for this reason we need an EEPROM to write a secret key which must be programmed on chip by the “Dickson Charge Pump”. This Dickson charge pump consists of several blocks, Pre-regulator, Dickson 6-stage, Clock generator and Comparator, it generates an output voltage Vout = 11,25V according to a variable input voltage between 2,7V and 4,4V. The layout occupies a small active area of 32.80um × 46.90um in CMOS 180nm.

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