论文信息 - High power, fully integrated SMT amplifiers with +47dBm OIP3 at 15 GHz and 6W, 38% efficiency at 30GHz using low cost, high volume PHEMT

High power, fully integrated SMT amplifiers with +47dBm OIP3 at 15 GHz and 6W, 38% efficiency at 30GHz using low cost, high volume PHEMT

The system power amplifier's linearity sets the maximum bit rate and the efficiency determines the maximum output power possible given a fixed heat dissipation or DC supply. This paper demonstrates that using a GaAs PHEMT 0.15µm gate process, industry leading performance can be attained. Shown is a 15GHz linear power amplifier capable of −52dBc IM3 at 21dBm output power (+47dBm OIP3). Also demonstrated is a 30GHz saturated power amplifier capable of making 38dBm (6W) output power at 38% peak power added efficiency. Both are fully matched to 50 Ω and have over 20dB of gain. Both are housed in a low cost laminate surface mount package.

Kohei Fujii | Henrik Morkner | Brent Ostermann

[2] H. Morkner,et al. Two novel broadband MMIC amplifiers in SMT package for 1 to 40 GHz low cost applications , 2005, 2005 European Microwave Conference.

[3] H. Morkner,et al. Ka-band 2W and 4W MMIC Power Amplifiers In 7×7mm Low-cost SMT Package , 2007, 2007 IEEE/MTT-S International Microwave Symposium.