Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN

A detailed analysis of morphology of gallium nitride crystal growth obtained by ammonothermal and halide vapor phase epitaxy methods was carried out. The work was conducted to determine the source of triangular planar defects visible in X-ray topography as areas with locally different lattice parameters. It is shown that the occurrence of these defects is related to growth hillocks. Particular attention was paid to analyzing the manner and consequences of merging hillocks. In the course of the study, the nature of the mentioned defects and the cause of their formation were determined. It was established that the appearance of the defects depends on the angle formed between the steps located on the sides of two adjacent hillocks. A universal growth model is presented to explain the cause of heterogeneity during the merging of growth hillocks.

[1]  J. Baruchel,et al.  Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals , 2022, Materials.

[2]  M. Boćkowski,et al.  Fundamental Studies on Crystallization and Reaching the Equilibrium Shape in Basic Ammonothermal Method: Growth on a Native Lenticular Seed , 2022, Materials.

[3]  M. Boćkowski,et al.  Ammonothermal and HVPE Bulk Growth of GaN , 2021, Wide Bandgap Semiconductors for Power Electronics.

[4]  M. Boćkowski,et al.  Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography , 2021, Materials.

[5]  M. Boćkowski,et al.  Suppressing the lateral growth during HVPE-GaN crystallization in the c-direction , 2020 .

[6]  T. Kachi,et al.  Characterization of Defects and Deep Levels for GaN Power Devices , 2020 .

[7]  M. Boćkowski,et al.  Recent progress in basic ammonothermal GaN crystal growth , 2020, Gallium Nitride Materials and Devices XVI.

[8]  M. Boćkowski,et al.  Growth of bulk GaN crystals , 2020, Journal of Applied Physics.

[9]  K. Iso,et al.  High quality GaN crystal grown by hydride vapor-phase epitaxy on SCAATTM , 2020, Applied Physics Express.

[10]  M. Boćkowski,et al.  Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds , 2019, Japanese Journal of Applied Physics.

[11]  Benjamin S. Jordan,et al.  Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method , 2019, Japanese Journal of Applied Physics.

[12]  Takumi Yamada,et al.  Promotion of lateral growth of GaN crystals on point seeds by extraction of substrates from melt in the Na-flux method , 2019, Applied Physics Express.

[13]  M. Islam,et al.  Photogalvanic Etching of n-GaN for Three-Dimensional Electronics , 2019, Journal of Electronic Materials.

[14]  P. Perlin,et al.  Review—Review on Optimization and Current Status of (Al,In)GaN Superluminescent Diodes , 2019, ECS Journal of Solid State Science and Technology.

[15]  M. Boćkowski,et al.  Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives , 2018, Progress in Crystal Growth and Characterization of Materials.

[16]  M. Boćkowski,et al.  Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds , 2016 .

[17]  J. Weyher,et al.  Principles of electroless photoetching of non-uniformly doped GaN: Kinetics and defect revealing , 2015 .

[18]  A. Danilewsky,et al.  Synchrotron White-Beam X-Ray Topography Analysis of the Defect Structure of HVPE-GaN Substrates , 2015 .

[19]  M. Boćkowski,et al.  HVPE-GaN growth on misoriented ammonothermal GaN seeds , 2014 .

[20]  M. Boćkowski,et al.  Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange , 2014 .

[21]  M. Boćkowski,et al.  Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds , 2013 .

[22]  Z. Wasilewski,et al.  Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers , 2013 .

[23]  F. D. Tichelaar,et al.  The K2S2O8-KOH photoetching system for GaN , 2010 .

[24]  J. Weyher,et al.  Photoetching Mechanisms of GaN in Alkaline S2O8 2 − Solution , 2009 .

[25]  J. Weyher,et al.  The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy , 2007 .