论文信息 - Short-channel effects in 0.2 μm channel length a-Si:H thin-film transistors fabricated by electron beam lithography

Short-channel effects in 0.2 μm channel length a-Si:H thin-film transistors fabricated by electron beam lithography

Hydrogenated amorphous silicon thin-film transistors have been fabricated by using electron-beam lithography to define channel length down to 0.2 μm. In this way it has been possible to evidence, for the first time, short-channel effects on these devices. In this work two short-channel effects occurring in 0.2 μm devices are discussed: degradation of the off-current as the source-drain voltage is increased and avalanche increase of the drain current for high source-drain voltage.

[1] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[2] J. Colinge. Reduction of kink effect in thin-film SOI MOSFETs , 1988, IEEE Electron Device Letters.

[3] G. Fortunato,et al. Low voltage operation a-Si:H thin film transistors with very thin PECVD a-SiO2 gate dielectric , 1989 .

[4] G. Fortunato,et al. Transport properties of plasma-deposited amorphous silicon dioxide , 1989 .

[5] H. Shichijo,et al. Anomalous leakage current in LPCVD PolySilicon MOSFET's , 1985, IEEE Transactions on Electron Devices.

[6] Y.A. El-Mansy,et al. Characterization of silicon-on-sapphire IGFET transistors , 1977, IEEE Transactions on Electron Devices.

[7] G. Fortunato,et al. Source-Drain Metal Contact Effects in Short-Channel a-Si:H Thin-Film Transistors , 1990 .

[8] P. L. Comber,et al. Present and future applications of amorphous silicon and its alloys , 1989 .

[9] J. Tihanyi,et al. Properties of ESFI MOS transistors due to the floating substrate and the finite volume , 1974, IEEE Transactions on Electron Devices.