High-speed InGaAsP/InP multiple quantum well, 1.55 mu m singlemode modulator

1.55 μm singlemode ridge waveguide modulators based on electroabsorption in InGaAsP/InP multiple quantum wells (MQW) are reported. A 10dB extinction ratio was obtained by applying a 2V drive voltage to a 100 μm long device with a 3dB on-state loss. The 3dB cutoff frequency is 12.5GHz.