Temperature Dependence of the Acoustic Deformation Potentials in CuInSe2 and CuInTe2

From the analysis of the variation of the energy gap with temperature and pressure in the chalcopyrite semiconducting compounds CuInSe2 and CuInTe2, the valence and conduction band acoustic deformation potentials are calculated as a function of temperature between 50 and 300 K. It is found that these parameters increase with temperature for both compounds. The results indicate, specially for CuInTe2, that the variation is important enough to be taken into account in the fit to the mobility data. Aus der Abhangigkeit der Energielucke von Temperatur und Druck werden fur die halbleitenden Verbindungen CuInSe2 und CuInTe2 die akustischen Deformationspotentiale fur Valenz- und Leitungs-band im Temperaturbereich zwischen 50 und 300 K berechnet. Fur beide Verbindungen nehmen diese Parameter mit der Temperatur zu. Insbesondere fur CuInTe2 ist diese Variation so stark, das sie bei der Anpassung der Beweglichkeitsdaten berucksichtigt werden mus.

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