论文信息 - Power law GaAs MESFET model

Power law GaAs MESFET model

A power law model for the GaAs MESFET is presented. It is shown that the model is applicable to MESFETs with high or low pinch-off voltages by simply varying the exponent of the power law term. The model parameters are quickly and easily obtained by a straightforward characterization process. The model was implemented in a GaAs integrated circuit simulator and used to simulate device current-voltage characteristics. >

Michael S. Shur | Andrzej Peczalski | J. Conger

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