Interfacial properties of a Si-SiO/sub 2/-Si structure fabricated by a modified silicon direct bonding technique
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I. Grekhov | T. Argunova | E. I. Beliakova | G. Mosina | E.D. Kim | S.C. Kim | J.M. Park | W. Min | B.S. Berman | L.S. Kosting | T. V. Kudryavtzeva