The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure
暂无分享,去创建一个
Xiaoyan Wang | Xiaoliang Wang | Baozhu Wang | Lunchun Guo | Cuimei Wang | Hongling Xiao | Junxue Ran | Weijun Luo | Cebao Fang | Guoxin Hu | W. Luo | H. Xiao | Cuimei Wang | Xiaoliang Wang | Baozhu Wang | Xiaoyan Wang | Junxue Ran | G. Hu | Lunchun Guo | C. Fang
[1] Zhan-guo Wang,et al. MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate , 2007 .
[2] H. Xiao,et al. The influence of internal electric fields on the transition energy of InGaN/gaN quantum well , 2007 .
[3] Tangsheng Chen,et al. Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates , 2005 .
[4] Acoustic phonon scattering in a low density, high mobility AlGaN∕GaN field-effect transistor , 2005, cond-mat/0503638.
[5] L. Faraone,et al. Effects of partially occupied sub-bands on two-dimensional electron mobility in AlxGa1-xN/GaN heterostructures , 2004 .
[6] B. Jogai,et al. Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors , 2003 .
[7] R. Coffie,et al. AlGaN/AlN/GaN high-power microwave HEMT , 2001, IEEE Electron Device Letters.
[8] T. Fisher,et al. Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors , 2000 .
[9] R. Dimitrov,et al. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures , 2000 .
[10] Lester F. Eastman,et al. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures , 1999 .
[11] Naoki Kobayashi,et al. Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistors , 1998 .
[12] P. Vogl,et al. Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors , 1998 .
[13] Joan M. Redwing,et al. Piezoelectric charge densities in AlGaN/GaN HFETs , 1997 .
[14] M. Asif Khan,et al. CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz , 1996, IEEE Electron Device Letters.