High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes
暂无分享,去创建一个
[1] E. Yoon,et al. Room temperature near-ultraviolet emission from In-rich InGaN∕GaN multiple quantum wells , 2005 .
[2] Seoung-Hwan Park. Many-body optical gain of GaInNAs∕GaAs strained quantum-well lasers , 2004 .
[3] Yik-Khoon Ee,et al. Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes , 2008, IEEE Journal of Quantum Electronics.
[4] David Vanderbilt,et al. Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997 .
[5] Shun Lien Chuang,et al. k.p method for strained wurtzite semiconductors , 1996 .
[6] Shuji Nakamura,et al. The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .
[7] Shun Lien Chuang,et al. Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers , 1998 .
[8] Stephan W Koch,et al. Quantum theory of the optical and electronic properties of semiconductors, fifth edition , 2009 .
[9] Sergio E. Ulloa,et al. Strain and crystallographic orientation effects on the valence subbands of wurtzite quantum wells , 2000 .
[10] Seoung-Hwan Park,et al. Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells , 2002 .
[11] D. Ahn. Theory of non-Markovian optical gain in quantum-well lasers , 1997 .
[12] Stephan W Koch,et al. Semiconductor-Laser Physics , 1994 .
[13] Shun Lien Chuang,et al. CRYSTAL-ORIENTATION EFFECTS ON THE PIEZOELECTRIC FIELD AND ELECTRONIC PROPERTIES OF STRAINED WURTZITE SEMICONDUCTORS , 1999 .
[14] Isamu Akasaki,et al. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells , 2000 .
[15] A. Andreev,et al. Calculation of electric field and optical transitions in InGaN∕GaN quantum wells , 2005 .
[16] Seoung-Hwan Park,et al. Optical gain in InGaN∕InGaAlN quantum well structures with zero internal field , 2008 .
[17] Shun Lien Chuang,et al. Intraband relaxation time effects on non-Markovian gain with many-body effects and comparison with experiment , 2000 .
[18] Hadis Morkoç,et al. Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy , 1996 .