Typical n-MOSFET Modeling using A Skewing Method — An n-MOSFET Modeling Method for RF Analog Circuit Design Centering—

This paper presents a theoretical yet practical device targeting method to extract typical model parameters of MOSFET devices on wafer for RF analog integrated circuit design. This method employs skewing algorithms with existing model parameters of typical-like device which is selected by using inter-lot process electrical test parameters. To demonstrate the plausibility of this method a cascade amplifier is designed to simulate frequency characteristic of S21 by using this method. Keyword Statistical Modeling, RF-CMOS, Device Targeting, Typical Skewing, Process Test

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