RF S-parameter degradation under hot carrier stress

The increasing high frequency capabilities of CMOS have resulted in increased RF and analog design in CMOS. Design of RF and analog circuits depends critically on device S-parameter characteristics, magnitude of real and imaginary components and their behavior as a function of frequency. Utilization of scaled high performance CMOS technologies poses challenges as concerns for reliability degradation mechanisms increase. It is important to understand and quantify the effects of the reliability degradation mechanisms on the S-parameters and in turn on RF and analog applications. Current modeling of voltage stress effects normally is limited to low frequency parameters, as is in-line characterization. In this paper we discuss the relationship between the low frequency parameters commonly characterized & modeled with the shifts in RF properties of MOSFETs.

[1]  Doris Schmitt-Landsiedel,et al.  Correction to "hot-carrier degradation of the low-frequency noise in MOS transistors under analog an , 2002 .

[2]  S. Cristoloveanu,et al.  Modeling of the 1/f noise overshoot in short-channel MOSFETs locally degraded by hot-carrier injection , 1989, IEEE Electron Device Letters.

[3]  E. Simoen,et al.  Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFETs , 1997, IEEE Electron Device Letters.

[4]  Wei Li,et al.  RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology , 2001 .

[5]  Charles Surya,et al.  The effect of hot-electron injection on the properties of flicker noise in n-channel MOSFETs , 1993 .

[6]  Holloway,et al.  0.18 /spl mu/m CMOS Technology For High-performance, Low-power, And RF Applications , 1997, 1997 Symposium on VLSI Technology.

[7]  Jinhong Yuan,et al.  RF circuit performance degradation due to hot carrier effects and soft breakdown , 2002, The 2002 45th Midwest Symposium on Circuits and Systems, 2002. MWSCAS-2002..

[8]  Charles G. Sodini,et al.  A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon , 1989 .

[9]  Yi-Jen Chan,et al.  Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model , 1998 .

[10]  Jinhong Yuan,et al.  Effect of gate oxide breakdown on RF device and circuit performance , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

[11]  Ralf Brederlow,et al.  Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions , 2002 .

[12]  L. Tsang,et al.  A sparse-matrix/canonical grid method for analyzing densely packed interconnects , 2000 .

[13]  Yi Liu,et al.  Effect of gate-oxide breakdown on RF performance , 2003 .

[14]  L. Pantisano,et al.  The impact of postbreakdown gate leakage on MOSFET RF performances , 2001, IEEE Electron Device Letters.

[15]  Chong-Gun Yu,et al.  RF performance degradation in nMOS transistors due to hot carrier effects , 2000 .

[16]  Mark M. Gourary,et al.  Approximation approach for timing jitter characterization in circuit simulators , 2003, 2003 Design, Automation and Test in Europe Conference and Exhibition.

[17]  Qiang Li,et al.  Soft breakdown and hot carrier reliability of CMOS RF mixer and redesign , 2002, 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280).