论文信息 - High‐resolution transmission electron microscopy of vicinal AlAs/GaAs interfacial structure

High‐resolution transmission electron microscopy of vicinal AlAs/GaAs interfacial structure

AlAs‐on‐GaAs vicinal interfaces grown by molecular beam epitaxy were investigated by high‐resolution transmission electron microscopy in the 〈110〉 cross section, and the interfacial step structures were clearly observed. For the first time, distinctly different step interval distributions are found for interfaces tilted 2° from (001) towards (111)A and towards (111)B. Step bunching is observed for A steps, while a regular array of steps is observed for B steps. The edges of A steps are also straighter than those of B steps.

T. Baba | N. Ikarashi | K. Ishida

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