25.8Gbps direct modulation of BH AlGaInAs DFB lasers with p-InP substrate for low driving current

1.3µm-band BH AlGaInAs DFB lasers with p-InP substrate are fabricated for 100GbE (25Gbps × 4 wavelengths). Very high mask margin of over 30% is achieved at 50oC under 25.8Gbps modulation with low operation current.