论文信息 - A study of the orientation dependence of Ga(Al)As growth by MOVPE

A study of the orientation dependence of Ga(Al)As growth by MOVPE

Abstract In this paper we describe the growth habit of GaAs and GaAlAs in the 〈100〉 and 〈111〉 crystal directions. We show that the “true” growth rate is orientation dependent, but this effect is normally masked by the limited “surface” mobility of the group III species.

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