论文信息 - Insights on radio frequency bilayer graphene FETs

Insights on radio frequency bilayer graphene FETs

In this work, we investigate through atomistic simulations the possible improvements achievable by using bilayer graphene as FET channel material for radio frequency applications, and the related challenges. Bilayer graphene shows better performance as compared to monolayer graphene in terms of larger output resistance, which in turns is beneficial both for the low frequency voltage gain, and the maximum gain frequency.

G. Iannaccone | G. Fiori | G. Fiori | G. Iannaccone

[1] G. Iannaccone,et al. Perspectives of graphene nanoelectronics: probing technological options with modeling , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[2] M. Elmasry,et al. Capacitance calculations in MOSFET VLSI , 1982, IEEE Electron Device Letters.

[3] H. Kurz,et al. Current saturation and voltage gain in bilayer graphene field effect transistors. , 2012, Nano letters.

[4] F. Xia,et al. High-frequency, scaled graphene transistors on diamond-like carbon , 2011, Nature.

[5] Frank Schwierz,et al. Electronics: Industry-compatible graphene transistors , 2011, Nature.

[6] K. Ng,et al. The Physics of Semiconductor Devices , 2019, Springer Proceedings in Physics.

[7] Kang L. Wang,et al. High-speed graphene transistors with a self-aligned nanowire gate , 2010, Nature.

[8] S. Sze,et al. Physics of Semiconductor Devices: Sze/Physics , 2006 .