Inherent Issues and Challenges of Program Disturbance of 3D NAND Flash Cell

Program disturbance characteristics of 3D vertical NAND Flash cell array architecture have been investigated intensively. A new 'program Y disturbance' mode peculiar to 3D NAND Flash cell is defined. Swing characteristics of poly-Si channel and increased NOP (number of program) stress have been compared with 2D planar NAND Flash cell. In this paper, new program method pertinent to 3D NAND Flash memory was proposed to obtain program disturbance characteristics for MLC.

[1]  Y. Fukuzumi,et al.  Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device , 2008, 2008 IEEE International Electron Devices Meeting.

[2]  Dong Woo Kim,et al.  Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory , 2006, 2009 Symposium on VLSI Technology.

[3]  Eun-Seok Choi,et al.  A Novel 3D Cell Array Architecture for Terra-Bit NAND Flash Memory , 2011, 2011 3rd IEEE International Memory Workshop (IMW).

[4]  Chih-Yuan Lu,et al.  A critical examination of 3D stackable NAND Flash memory architectures by simulation study of the scaling capability , 2010, 2010 IEEE International Memory Workshop.

[5]  Takashi Maeda,et al.  Optimal device structure for Pipe-shaped BiCS Flash memory for ultra high density storage device with excellent performance and reliability , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[6]  S. Aritome,et al.  Novel 3-dimensional Dual Control-gate with Surrounding Floating-gate (DC-SF) NAND flash cell for 1Tb file storage application , 2010, 2010 International Electron Devices Meeting.

[7]  Shinsugita-cho Isogo-ku,et al.  Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory , 2007 .

[8]  Y. Iwata,et al.  Optimal Integration and Characteristics of Vertical Array Devices for Ultra-High Density, Bit-Cost Scalable Flash Memory , 2007, 2007 IEEE International Electron Devices Meeting.