Research on the With-In Wafer Non-Uniformity (WIWNU) of the Large Quadrate Optic in the Fast Polishing Process

In this paper, the with-in-wafer non-uniformity (WIWNU) of the lager quadrate optic in the fast polishing process (FPP) is discussed from the machine side. At the machine side, the non-uniform stress on the wafer surface is the major reason for the non-uniform material removal rate which results in the WIWNU. Stresses arise mainly from two sources, namely the pressure exerted by the polishing pad and shear stress due to the relative motion between the wafer and pad. Based on the special chemical mechanical polishing FPP, the kinematic motion of the wafer is analyzed and the non-uniform stress is analyzed by a 3D axisymmetric quasi-static model. The WIWNU can be reduced by adjusting the stress.

[1]  David Dornfeld,et al.  Wafer-Scale CMP Modeling of With-in Wafer Non-Uniformity , 2003 .

[2]  Yaw S. Obeng,et al.  Surface-modified polymeric pads for enhanced performance during chemical mechanical planarization , 2005 .

[3]  Tyan Feng,et al.  Nonuniformity of Wafer and Pad in CMP: Kinematic Aspects of View , 2007, IEEE Transactions on Semiconductor Manufacturing.

[4]  LI Ya-guo Edge effects on material removal amount in ultra precise polishing process , 2008 .

[5]  David Dornfeld,et al.  Optimization of CMP from the Viewpoint of Consumable Effects , 2003 .

[6]  David Dornfeld,et al.  Material removal regions in chemical mechanical planarization for submicron integrated circuit fabrication: coupling effects of slurry chemicals, abrasive size distribution,and wafer-pad contact area , 2003 .

[7]  W. Tseng,et al.  Re‐examination of Pressure and Speed Dependences of Removal Rate during Chemical‐Mechanical Polishing Processes , 1997 .

[8]  Ship-Peng Lo,et al.  A study of a finite element model for the chemical mechanical polishing process , 2004 .

[9]  Qiao Xu,et al.  Pressure and velocity dependence of the material removal rate in the fast polishing process. , 2008, Applied optics.

[10]  David Dornfeld,et al.  Effects of abrasive size distribution in chemical mechanical planarization: modeling and verification , 2003 .

[11]  Yeou-Yih Lin,et al.  Analysis of retaining ring using finite element simulation in chemical mechanical polishing process , 2007 .

[12]  Fei Xu,et al.  Re-examination of Pressure and Speed Dependences of Removal Rate during Chemical-Mechanical Polishing Processes , 2004 .

[13]  David Dornfeld,et al.  Material removal mechanism in chemical mechanical polishing: theory and modeling , 2001 .