Research on the With-In Wafer Non-Uniformity (WIWNU) of the Large Quadrate Optic in the Fast Polishing Process
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[1] David Dornfeld,et al. Wafer-Scale CMP Modeling of With-in Wafer Non-Uniformity , 2003 .
[2] Yaw S. Obeng,et al. Surface-modified polymeric pads for enhanced performance during chemical mechanical planarization , 2005 .
[3] Tyan Feng,et al. Nonuniformity of Wafer and Pad in CMP: Kinematic Aspects of View , 2007, IEEE Transactions on Semiconductor Manufacturing.
[4] LI Ya-guo. Edge effects on material removal amount in ultra precise polishing process , 2008 .
[5] David Dornfeld,et al. Optimization of CMP from the Viewpoint of Consumable Effects , 2003 .
[6] David Dornfeld,et al. Material removal regions in chemical mechanical planarization for submicron integrated circuit fabrication: coupling effects of slurry chemicals, abrasive size distribution,and wafer-pad contact area , 2003 .
[7] W. Tseng,et al. Re‐examination of Pressure and Speed Dependences of Removal Rate during Chemical‐Mechanical Polishing Processes , 1997 .
[8] Ship-Peng Lo,et al. A study of a finite element model for the chemical mechanical polishing process , 2004 .
[9] Qiao Xu,et al. Pressure and velocity dependence of the material removal rate in the fast polishing process. , 2008, Applied optics.
[10] David Dornfeld,et al. Effects of abrasive size distribution in chemical mechanical planarization: modeling and verification , 2003 .
[11] Yeou-Yih Lin,et al. Analysis of retaining ring using finite element simulation in chemical mechanical polishing process , 2007 .
[12] Fei Xu,et al. Re-examination of Pressure and Speed Dependences of Removal Rate during Chemical-Mechanical Polishing Processes , 2004 .
[13] David Dornfeld,et al. Material removal mechanism in chemical mechanical polishing: theory and modeling , 2001 .