Analytical threshold voltage model for ultrathin SOI MOSFETs including short-channel and floating-body effects

Short-channel effects (SCE) in ultrathin silicon-on-insulator (SOI) fully depleted (FD) MOSFETs are analyzed and an analytical model for threshold voltage, including the kink effect, is presented. The proposed model accounts for (1) a general nonuniform channel doping profile, (2) the drain-induced V/sub th/- lowering enhancement resulting from the interaction of (a) impact ionization, (b) floating-body, and (c) parasitic-bipolar effects. Good agreement between the proposed model and experimental data is demonstrated. Impact ionization and floating-body effects dominate V/sub th/ lowering for drain voltages larger than V/sub dk//spl sime/B/sub i/./spl lambda//sub i//3, where B/sub i/ is the impact ionization coefficient, and /spl lambda//sub i/ is the impact ionization length, a structural parameter which, for a single-drain SOI MOSFET, coincides with the SCE characteristic length /spl lambda/.

[1]  Mansun Chan,et al.  Body self bias in fully depleted and non-fully depleted SOI devices , 1994, Proceedings. IEEE International SOI Conference.

[2]  Y.C. Cheng,et al.  Hot-carrier effects in thin-film fully depleted SOI MOSFET's , 1994, IEEE Electron Device Letters.

[3]  K. Sonoda,et al.  Monte Carlo study of impact ionization phenomena in small geometry MOSFET's , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[4]  Chenming Hu,et al.  Reverse short-channel effects and channel-engineering in deep-submicron MOSFETs: modeling and optimization , 1996, 1996 Symposium on VLSI Technology. Digest of Technical Papers.

[5]  A. O. Adan.  An Advanced Shallow SIMOX/CMOS Technology for High Performance Portable Systems , 1997 .

[6]  Mansun Chan,et al.  Threshold voltage model for deep-submicrometer fully depleted SOI MOSFET's , 1995 .

[7]  Jason C. S. Woo,et al.  Two-dimensional analytic modeling of very thin SOI MOSFETs , 1990 .

[8]  Toshiaki Tsuchiya,et al.  Suppression of the parasitic bipolar effect in ultra-thin-film nMOSFETs/SIMOX by Ar ion implantation into source/drain regions , 1995, Proceedings of International Electron Devices Meeting.

[9]  J. Slotboom,et al.  Non-local impact ionization in silicon devices , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[10]  Jerry G. Fossum,et al.  Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's , 1991 .

[11]  New hot-carrier-degradation mode in thin-film SOI nMOSFET's , 1995, IEEE Electron Device Letters.

[12]  V. K. De,et al.  Short channel models and scaling limits of SOI and bulk MOSFETs , 1994, IEEE J. Solid State Circuits.

[13]  S. Kaneko,et al.  Channel-drain lateral profile engineering for advanced CMOS on ultra-thin SOI technology , 1996, 1996 IEEE International SOI Conference Proceedings.

[14]  K. K. Young.  Short-channel effect in fully depleted SOI MOSFETs , 1989 .

[15]  C. Hu,et al.  Threshold voltage model for deep-submicrometer MOSFETs , 1993 .

[16]  T. Tsuchiya,et al.  Three mechanisms determining short-channel effects in fully-depleted SOI MOSFETs , 1998 .

[17]  Tak H. Ning,et al.  A room temperature 0.1 /spl mu/m CMOS on SOI , 1994 .

[18]  S. Ogura,et al.  Halo doping effects in submicron DI-LDD device design , 1985, 1985 International Electron Devices Meeting.

[19]  J. Colinge.  Silicon-on-Insulator Technology: Materials to VLSI , 1991 .

[20]  J. Colinge.  Silicon-on-Insulator Technology , 1991 .