论文信息 - Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1 - 字舞流文

Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1

G. Simin | M. Chandrashekhar | Asif Khan | M. Gaevski | M. Jewel | Shahab Mollah | A. Mamun | K. Hussain | Joshua Letton