Tunable Berry curvature, valley and spin Hall eect in Bilayer MoS2

ThechiralityofelectronicBlochbandsisresponsibleformanyintriguingpropertiesoflayeredtwo-dimensional materials.Weshowthatinbilayersoftransitionmetaldichalcogenides(TMDCs),unlikeinfew-layergrapheneand monolayer TMDCs, both intralayer and interlayer couplings give important contributions to the Berry curvature in the K and − K valleys of the Brillouin zone. The interlayer contribution leads to the stacking dependence of the Berry curvature and we point out the differences between the commonly available 3R type and 2H type bilayers. Due to the interlayer contribution, the Berry curvature becomes highly tunable in double gated devices. We study the dependence of the valley Hall and spin Hall effects on the stacking type and external electric field. Although the valley and spin Hall conductivities are not quantized, in MoS 2 2H bilayers, they may change sign as a function of the external electric field, which is reminiscent of the behavior of lattice Chern insulators.

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