A high voltage Super-Junction NLDMOS device implemented in 0.13µm SOI based Smart Power IC technology

This paper reports Super-Junction NLDMOS device implemented in Freescale's 0.13 µm SOI based Smart Power IC technology. This SJ device can be operated at both high and low side applications without back-gate effect. It achieves breakdown voltage of 111V and Rds.on × area of 138 mΩ.mm2 with robust characteristics.

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