论文信息 - 3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor. - 字舞流文

3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.

C. Bongiorno | G. Condorelli | P. Fiorenza | G. Foti | F. La Via | G. Abbondanza | R. Anzalone | A. Severino | M. Mauceri | G. D'Arrigo