A highly reliable ferroelectric memory technology with SrBi/sub 2/Ta/sub 2/O/sub 9/-based material and metal covering cell structure
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T. Mikawa | Y. Sasai | Y. Shimada | A. Noma | M. Azuma | K. Sato | T. Otsuki | T. Ito | T. Nasu | E. Fajii | Y. Judai | Toyoji Ito | T. Kutsunai | Y. Nagano | Y. Izutsu | H. Yasuoka