The influence of the bias type, doping condition and pattern geometry on AFM tip‐induced local oxidation

Abstract In this article, the influences of bias types, doping conditions, and pattern geometry on the kinetics of oxides on Si substrates produced by AFM tip‐induced local oxidation were investigated. The growth height of oxide using a +10V sample bias is higher than that when using a ‐10V tip bias, while the magnitude of sample‐tip bias is kept the same. A polygon concept was introduced to produce a circular pattern. The effects of the number of sides in the polygon on the height of oxide circular pattern were explored. It was observed that the oxide height increases with the number of sides of the polygon pattern when the radius is the same. And the oxide is higher on p‐Si(100) than on p‐Si(111) or n‐Si(111).