Two-dimensional modeling of ion implantation induced point defects

An analytical model for the description of ion-implantation-induced damage profiles is presented. The model is based on extensive Monte Carlo simulations of B-, P-, As-, and Sb-implantations in Si. One-dimensional profiles are described by a Gaussian function and an exponential function joined together continuously with continuous first derivatives. The two-dimensional model has previously been developed by the authors for dopant profiles and is demonstrated to apply well to point defect distributions. Parameters have been obtained for the four ions by fitting the model to the Monte Carlo results, and they are provided in the form of tables for the energy range of 10-300 keV (for the 1D model 1-300 keV). The Monte Carlo simulations are based on the binary collision approximation, the assumption of a random target, and the validity of the linear collision cascade theory. The importance of energy transport by recoils is pointed out. >

[1]  T. Seidel,et al.  A review of rapid thermal annealing (RTA) of B, BF 2 and As ions implanted into silicon , 1985 .

[2]  H. Runge.  Distribution of implanted ions under arbitrarily shaped mask edges , 1977 .

[3]  A. M. Mazzone,et al.  Three-Dimensional Monte Carlo Simulations--Part II: Recoil Phenomena , 1985, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[4]  Dimitri A. Antoniadis,et al.  Oxidation‐Induced Point Defects in Silicon , 1982 .

[5]  D. Thompson,et al.  Energy spikes in Si and Ge due to heavy ion bombardment , 1978 .

[6]  A. Bourret,et al.  Defects created by self-implantation in Si as a function of temperature and fluence , 1986 .

[7]  M. Robinson,et al.  A proposed method of calculating displacement dose rates , 1975 .

[8]  Influence of recoil transport on energy-loss and damage profiles , 1986 .

[9]  S. Furukawa,et al.  Lateral spread of damage formed by ion implantation , 1976 .

[10]  Mark T. Robinson,et al.  Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation , 1974 .

[11]  Jun Liu,et al.  Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon , 1985 .

[12]  J. Albers.  Monte Carlo calculation of one- and two-dimensional particle and damage distributions for ion-implanted dopants in silicon , 1985, IEEE Transactions on Electron Devices.

[13]  K. Bruce Winterbon,et al.  Ion Implantation Range and Energy Deposition Distributions , 1975 .

[14]  S. Selberherr,et al.  Two-dimensional modeling of ion implantation with spatial moments , 1987 .

[15]  Hiroshi Ishiwara,et al.  Theoretical Considerations on Lateral Spread of Implanted Ions , 1972 .

[16]  James F. Gibbons,et al.  An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targets , 1980 .

[17]  R S Pease,et al.  REVIEW ARTICLES: The Displacement of Atoms in Solids by Radiation , 1955 .

[18]  P. Sigmund.  A note on integral equations of the kinchin-pease type , 1969 .

[19]  K. Taniguchi,et al.  IMPACT—A point-defect-based two-dimensional process simulator: Modeling the lateral oxidation-enhanced diffusion of dopants in silicon , 1986, IEEE Transactions on Electron Devices.

[20]  D. Thompson,et al.  Disorder production and amorphisation in ion implanted silicon , 1980 .

[21]  K. B. Winterbon.  Calculating moments of range distributions , 1986 .

[22]  E. Krimmel,et al.  Transmission electron microscopical imaging of lateral implantation effects near mask edges in B+-implanted Si wafers , 1978 .