Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs

Abstract We have investigated the effects of 50 MeV lithium ion irradiation on the DC electrical characteristics of first-generation silicon–germanium heterojunction bipolar transistors (50 GHz SiGe HBTs) in the dose range of 600 krad to 100 Mrad. The results of 50 MeV Li 3+ ion irradiation on the SiGe HBTs are compared with 63 MeV proton and Co-60 gamma irradiation results in the same dose range in order to understand the damage induced by different LET species. The radiation response of emitter–base (EB) spacer oxide and shallow trench isolation (STI) oxide to different irradiation types are discussed in this paper. We have also focused on the efficacy in the application of a Pelletron accelerator to study total dose irradiation studies in SiGe HBTs.

[1]  N. Pushpa,et al.  An analysis of 100 MeV F8+ ion and 50 MeV Li3+ ion irradiation effects on silicon NPN rf power transistors , 2010 .

[2]  John D. Cressler,et al.  Application of advanced 200 GHz Si–Ge HBTs for high dose radiation environments , 2010 .

[3]  M. Turowski,et al.  Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs , 2009, IEEE Transactions on Nuclear Science.

[4]  C. K. Maiti,et al.  Applications of Silicon-Germanium Heterostructure Devices , 2001 .

[5]  J. Cressler,et al.  Evaluation of the radiation tolerance of several generations of SiGe heterojunction bipolar transistors under radiation exposure , 2007 .

[6]  R. Krithivasan,et al.  A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations , 2007, IEEE Transactions on Nuclear Science.

[7]  Fan Chen,et al.  Silicon-Germanium Heterojunction Bipolar Transistors , 2002 .

[8]  D. Fleetwood,et al.  Radiation effects in oxynitrides grown in N/sub 2/O , 1994 .

[9]  S. Clark,et al.  Neutron radiation tolerance of advanced UHV/CVD SiGe HBT BiCMOS technology , 1997 .

[10]  Alvin J. Joseph,et al.  Neutral base recombination and its influence on the temperature dependence of Early voltage and current gain-Early voltage product in UHV/CVD SiGe heterojunction bipolar transistors , 1997 .

[11]  Bongim Jun,et al.  The Effects of Irradiation Temperature on the Proton Response of SiGe HBTs , 2006, IEEE Transactions on Nuclear Science.

[12]  J. C. Pickel,et al.  Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits , 2003 .