Annealing induced inversion of quantum dot fine-structure splitting

By mapping the anisotropy fine-structure splitting of the exciton ground state in the luminescence spectra of individual CdxZn1−xSe quantum dots, treated by postgrowth rapid thermal annealing (TA), a preferred in-plane axis of Zn–Cd interdiffusion has been identified. In particular, a TA-induced sign reversal of the fine-structure splitting is demonstrated. Additionally, in the annealed quantum dots, the binding energy of the charged exciton reaches a maximum value when the fine-structure splitting is minimum. The studies demonstrate that by postgrowth thermal annealing the symmetry of individual quantum dot can be modulated.

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