论文信息 - Extremely low-frequency measurements using an active bias tee

Extremely low-frequency measurements using an active bias tee

An active bias tee suitable for small- and large-signal low-frequency (5 Hz to 400 kHz) characterization of electron devices has been designed and manufactured. Different experimental results, carried out on 0.25 μm GaAs and GaN HEMTs, confirm the validity of the proposed bias circuit.

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