Mg-doped InGaAsP/InP l.e.d.s for high-bit-rate optical-communication systems

The design criteria for high-speed luminescent diodes are applied to realise InGaAsP/InP l.e.d.s at 1.26 μm wavelength. By highly doping the active region with Mg, a modulation bandwidth in excess of 1 GHz is achieved.