Optoelectronic properties of self-assembled InAs/InGaAs quantum dots

In the past decade, self-assembled quantum dots (SAQDs) grown by epitaxial techniques such as molecular beam epitaxy and metal-organic chemical vapor deposition have become a topic of extensive research not only for the fundamental understanding of fascinating physics that exists in zero-dimensional systems, but also for their application in electronic and optoelectronic devices. This article reviews the basic properties and device applications of SAQDs. After a brief introduction, which includes a historical perspective of the work undertaken on SAQDs, the thermodynamics of the formation of these dots through the Stranski-Krastonow growth are discussed. The carrier dynamics and relaxation mechanisms present in these dots are then reviewed. Finally, the properties of intersubband QD detector- an important device that is expected to exploit the favorable properties of SAQDs-are discussed.