High Voltage Integrated Chip Power Recovering Topology for Implantable Wireless Biomedical Devices

In near field wireless power links for biomedical implants, inductive voltage at receiver end (Rx) largely exceeds the compliance of low voltage integrated power recovery circuits. To limit the magnitude of induced signal, most of the low voltage (LV) integrated power recovery schemes employ methods like voltage clipping and shunt regulation. These methods are proved to be power inefficient. Therefore, to overcome the voltage limitation and to improve the power efficiency, we propose an on-chip high-voltage (HV) power recovery scheme based on step-down approach, which allows supply voltage as high as 30V. The proposed design comprises of enhanced semi-active HV bridge rectifier, reference voltage generator and HV series voltage regulator. In addition, a battery management circuit that ensures safe and reliable charging of the implant battery is proposed and implemented. The proposed design is fabricated with 0.35I¼m HV BCD technology based on LOCOS 0.35I¼m CMOS process. Rectifier and regulator power efficacy are analyzed and compared through simulation and measurement results.

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