论文信息 - Enhanced performance in sub-100 nm CMOSFETs using strained epitaxial silicon-germanium

Enhanced performance in sub-100 nm CMOSFETs using strained epitaxial silicon-germanium

We report the demonstration of a novel sub-100 nm CMOS technology with strained-Si/sub 0.76/Ge/sub 0.24//Si heterostructure channels formed by ultra-high-vacuum chemical-vapor-deposition (UHV-CVD). The incorporation of 24% Ge in the channel provides a 25% enhancement in PMOSFET drive current for channel lengths down to 0.1 /spl mu/m. Enhancement in NMOSFET drive current is concomitantly observed for channel lengths below 0.4 /spl mu/m.

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