Growth mechanisms of GaAs nanowires by gas source molecular beam epitaxy
暂无分享,去创建一个
[1] M. Borgström,et al. Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study , 2004 .
[2] H. Ruda,et al. Growth and photoluminescence characteristics of AlGaAs nanowires , 2004 .
[3] V. Dubrovskii,et al. Growth rate of a crystal facet of arbitrary size and growth kinetics of vertical nanowires. , 2004, Physical review. E, Statistical, nonlinear, and soft matter physics.
[4] Timothy J. Trentler,et al. Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth , 1995, Science.
[5] John A. Rogers,et al. Photolithographic Route to the Fabrication of Micro/Nanowires of III–V Semiconductors , 2005 .
[6] Role of liquid droplet surface diffusion in the vapor‐liquid‐solid whisker growth mechanism , 1994 .
[7] Lars Samuelson,et al. Self-forming nanoscale devices , 2003 .
[8] S. Karpov,et al. Instability of III–V compound surfaces due to liquid phase formation , 1993 .
[9] T. Nishinaga,et al. RHEED oscillation and surface diffusion length on GaAs(111)B surface , 1990 .
[10] V. Ustinov,et al. Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment , 2005 .
[11] J. Hirth,et al. Kinetics of Diffusion-Controlled Whisker Growth , 1964 .
[12] Systematic investigation of growth of InP nanowires by metalorganic vapor-phase epitaxy , 2004 .
[13] James S. Harris,et al. Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms , 2001 .
[14] Charles M. Lieber,et al. Logic Gates and Computation from Assembled Nanowire Building Blocks , 2001, Science.
[15] Xiangfeng Duan,et al. General Synthesis of Compound Semiconductor Nanowires , 2000 .
[16] G. W Sears,et al. A growth mechanism for mercury whiskers , 1955 .
[17] Kenji Hiruma,et al. Growth and optical properties of nanometer‐scale GaAs and InAs whiskers , 1995 .
[18] Lars Samuelson,et al. Growth of one-dimensional nanostructures in MOVPE , 2004 .
[19] Lars Samuelson,et al. Growth mechanisms for GaAs nanowires grown in CBE , 2004 .
[20] Takashi Fukui,et al. Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates , 2004 .
[21] Lars Samuelson,et al. Solid-phase diffusion mechanism for GaAs nanowire growth , 2004, Microscopy and Microanalysis.
[22] Y. Katayama,et al. Surface diffusion length of Ga adatoms on (1̄1̄1̄)B surfaces during molecular beam epitaxy , 1994 .
[23] T. Katsuyama,et al. GaAs free‐standing quantum‐size wires , 1993 .
[24] D. Kashchiev,et al. Unified description of the rate of nucleation-mediated crystal growth , 1989 .
[25] G. E. Cirlin,et al. On the non‐monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature , 2004 .
[26] Lars Samuelson,et al. Role of surface diffusion in chemical beam epitaxy of InAs nanowires , 2004 .
[27] U. Gösele,et al. Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy , 2004 .