The effect of the angle of incidence on proton induced single events in devices-a critical assessment by modeling
暂无分享,去创建一个
[1] J. Barak,et al. Modeling of proton induced SEUs , 1996 .
[2] Robert A. Reed,et al. Effects of geometry on the proton SEU dependence on the angle of incidence , 1995 .
[3] R. Silberberg,et al. Partial Cross-Sections in High-Energy Nuclear Reactions, and Astrophysical Applications. I. Targets With z <= 28. , 1973 .
[4] A. Mignerey,et al. Energy deposition in intermediate-energy nucleon-nucleus collisions , 1983 .
[5] Robert A. Reed,et al. Implications of angle of incidence in SEU testing of modern circuits , 1994 .
[6] Wojtek Hajdas,et al. On the angular dependence of proton induced events and charge collection [SRAMs] , 1994 .
[7] Huntington W. Curtis,et al. Accelerated testing for cosmic soft-error rate , 1996, IBM J. Res. Dev..
[8] O. Flament,et al. Dynamic single event effects in a CMOS/thick SOI shift register , 1995 .
[9] O. Musseau. Single-event effects in SOI technologies and devices , 1996 .
[10] J. G. Rollins,et al. Estimation of proton upset rates from heavy ion test data (ICs) , 1990 .
[11] G. R. Srinivasan,et al. A microscopic model of energy deposition in silicon slabs exposed to high-energy protons , 1987 .
[12] J. R. Letaw,et al. Improved cross section calculations for astrophysical applications , 1985 .