Effect of silicon-surface orientation in the bulk model of thermal oxidation

[1]  Linards Skuja,et al.  Interstitial oxygen molecules in amorphous SiO2. I. Quantitative concentration analysis by thermal desorption, infrared photoluminescence, and vacuum-ultraviolet optical absorption , 2005 .

[2]  C. Takoudis,et al.  SiO2/Si(100) interface characterization using infrared spectroscopy: estimation of substoichiometry and strain , 2004 .

[3]  M. Umeno,et al.  Large-Scale Atomistic Modeling of Thermally Grown SiO2 on Si(111) Substrate , 2004 .

[4]  H. Hughes,et al.  The structural aspects of non-crystalline SiO2 films on silicon: a review , 2003 .

[5]  James D. Plummer,et al.  Silicon Orientation Effects in the Initial Regime of Wet Oxidation , 2002 .

[6]  H. Hughes,et al.  Density gradient in SiO2 films on silicon as revealed by positron annihilation spectroscopy , 2002 .

[7]  H. Hughes,et al.  Effects of heat treatments in inert ambients on Si/SiO2 structures , 1999 .

[8]  K. Yamabe,et al.  18O2 isotope labeling studies of stress effect on oxidation kinetics , 1998 .

[9]  Y. Sugita,et al.  Structural fluctuation of SiO2 network at the interface with Si , 1996 .

[10]  T. Ohmi,et al.  Silicon Wafer Orientation Dependence of Metal Oxide Semiconductor Device Reliability , 1994 .

[11]  Mrstik Bj,et al.  Evidence of a long-range density gradient in SiO2 films on Si from H2-permeability measurements. , 1993 .

[12]  Norton,et al.  X-ray scattering studies of the Si-SiO2 interface. , 1988, Physical review letters.

[13]  E. Irene,et al.  The Effect of Surface Orientation on Silicon Oxidation Kinetics , 1987 .

[14]  A. G. Revesz,et al.  Structural and Strain‐Related Effects during Growth of SiO2 Films on Silicon , 1987 .

[15]  Abbas Ourmazd,et al.  Si-->SiO 2 transformation: Interfacial structure and mechanism , 1987 .

[16]  E. Irene,et al.  Intrinsic SiO2 film stress measurements on thermally oxidized Si , 1987 .

[17]  H. Z. Massoud,et al.  Silicon Oxidation Studies: Silicon Orientation Effects on Thermal Oxidation , 1986 .

[18]  E. Taft.  Diffusion of Oxygen in Silicon Thermal Oxides , 1985 .

[19]  G. Ghibaudo,et al.  Role of stress on the parabolic kinetic constant for dry silicon oxidation , 1984 .

[20]  Franz J. Himpsel,et al.  Probing the transition layer at the SiO2‐Si interface using core level photoemission , 1984 .

[21]  J. R. Patel,et al.  Diffusivity of oxygen in silicon at the donor formation temperature , 1983 .

[22]  James D. Plummer,et al.  Thermal oxidation of silicon in dry oxygen , 1983 .

[23]  L. Forget,et al.  Reversal of Relative Oxidation Rates of and Oriented Silicon Substrates at Low Oxygen Partial Pressures , 1980 .

[24]  E. Taft,et al.  Index of Refraction of Steam Grown Oxides on Silicon , 1980 .

[25]  J. Plummer,et al.  Kinetics of the Thermal Oxidation of Silicon in O 2 / H 2 O and O 2 / Cl2 Mixtures , 1978 .

[26]  D. W. Hess,et al.  Kinetics of the Thermal Oxidation of Silicon in O 2 / HCl Mixtures , 1977 .

[27]  E. Irene.  The Effects of Trace Amounts of Water on the Thermal Oxidation of Silicon in Oxygen , 1974 .

[28]  Y. J. von der Meulen,et al.  Kinetics of Thermal Growth of Ultra‐Thin Layers of SiO2 on Silicon I . Experiment , 1972 .

[29]  W. A. Pliskin.  Separation of the linear and parabolic terms in the steam oxidation of silicon , 1966 .

[30]  A. S. Grove,et al.  General Relationship for the Thermal Oxidation of Silicon , 1965 .

[31]  B. E. Deal.  The Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and Steam , 1963 .

[32]  Joseph R. Ligenza,et al.  EFFECT OF CRYSTAL ORIENTATION ON OXIDATION RATES OF SILICON IN HIGH PRESSURE STEAM , 1961 .