A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure

A high performance trench insulated gate bipolar transistor which combines a semi-superjunction structure and an accumulation channel (sSJTAC-IGBT) is proposed for the first time. Compared with the TAC-IGBT, the new device not only retains the advantages of the accumulation channel, but also obtains a larger breakdown voltage (BV), a faster turn-off speed and a smaller saturation current level while keeping the on-state voltage drop lower as the TAC-IGBT does as well. Therefore, the new structure enlarges the short circuit safe operating area (SCSOA) and reduces the energy loss during the turn-off process.

[1]  Wang Bo,et al.  A simulation study on a novel trench SJIGBT , 2012 .

[2]  Vinod Kumar Khanna,et al.  Insulated Gate Bipolar Transistor IGBT Theory and Design: Khanna/Insulated Gate Bipolar Transistor IGBT Theory and Design , 2003 .

[3]  Jaegil Lee,et al.  A simulation study on novel field stop IGBTs using superjunction , 2006 .

[4]  B. Zhang,et al.  Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode , 2012, IEEE Electron Device Letters.

[5]  T. Fujihira.  Theory of Semiconductor Superjunction Devices , 1997 .

[6]  Bo Zhang,et al.  TAC-IGBT: An improved IGBT structure , 2009, International Symposium on Power Semiconductor Devices and IC's.

[7]  Li Zehong,et al.  Insulated gate bipolar transistor with trench gate structure of accumulation channel , 2010 .

[8]  Zhaoji Li,et al.  SEMICONDUCTOR DEVICES: Trench gate IGBT structure with floating P region , 2010 .

[9]  B. Baliga,et al.  Silicon planar ACCUFET: improved power MOSFET structure , 2000 .

[10]  Jerry L. Hudgins,et al.  - Power Semiconductor Devices , 2018, The Electric Power Engineering Handbook - Five Volume Set.

[11]  H. Takahashi,et al.  Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application , 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.

[12]  T. Fujihira,et al.  Simulated superior performances of semiconductor superjunction devices , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[13]  Vinod Kumar Khanna,et al.  The insulated gate bipolar transistor (IGBT) : theory and design , 2003 .

[14]  Chen Xingbi.  A Novel Super-junction IGBT and Its Unique Conducting Mechanism , 2011 .

[15]  Marina Antoniou,et al.  The Semi-Superjunction IGBT , 2010, IEEE Electron Device Letters.