Performance of dual-gate GaAs MESFETs as gain-controlled low-noise amplifiers and high-speed modulators

A dual-gate GaAs MESFET with maximum gain of 18 dB at 10 GHz and minimum noise figure of 4 dB with 12 dB associated gain will be described. Variation of second gate potential has been found to yield gain modulation with a 44 dB dynamic range and 70 ps risetime.