论文信息 - ELECTRICAL PROPERTIES OF GALLIUM- AND ANTIMONY-DOPED SILICON LAYERS, GROWN BY SOLID PHASE EPITAXY IN A MOLECULAR BEAM EPITAXIAL GROWTH CHAMBER - 字舞流文

ELECTRICAL PROPERTIES OF GALLIUM- AND ANTIMONY-DOPED SILICON LAYERS, GROWN BY SOLID PHASE EPITAXY IN A MOLECULAR BEAM EPITAXIAL GROWTH CHAMBER

F. Schäffler | H. Kibbel | A. Casel

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