Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector

We experimentally demonstrate a short wavelength ZnCdSe/ZnCdMgSe quantum well infrared photodetector (QWIP) with a room temperature responsivity of over 30 A/W. The dark-current limited detectivity at 80 K was measured to be 2×109 cm√Hz/W.

[1]  Jamie D. Phillips,et al.  Evaluation of the fundamental properties of quantum dot infrared detectors , 2002 .

[2]  Hooman Mohseni,et al.  Plasmonic enhanced quantum well infrared photodetector with high detectivity , 2010 .

[3]  A. Shen,et al.  ZnCdSe/ZnCdMgSe quantum well infrared photodetector , 2012, 2012 Conference on Lasers and Electro-Optics (CLEO).

[4]  Robert R. Alfano,et al.  Midinfrared intersubband absorption in ZnxCd1−xSe∕Znx′Cdy′Mg1−x′−y′Se multiple quantum well structures , 2006 .

[5]  C. Manz,et al.  InGaAs∕AlAsSb quantum cascade detectors operating in the near infrared , 2007 .

[6]  Cohen,et al.  Quasiparticle band structures of six II-VI compounds: ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe. , 1994, Physical review. B, Condensed matter.

[7]  Hong Lu,et al.  Optical characterization and evaluation of the conduction band offset for ZnCdSe∕ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxy , 2005 .

[8]  V. Guériaux,et al.  Double barrier strained quantum well infrared photodetectors for the 3–5μm atmospheric window , 2009 .

[9]  A. Shen,et al.  Intersubband absorption in CdSe∕ZnxCdyMg1−x−ySe self-assembled quantum dot multilayers , 2007 .

[10]  A. Shen,et al.  ZnCdSe/ZnCdMgSe quantum cascade electroluminescence , 2008 .

[11]  M. Buchanan,et al.  Studies of Si segregation in GaAs using current-voltage characteristics of quantum well infrared photodetectors , 1994 .

[12]  Wei Zhang,et al.  High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector , 2007 .

[13]  Stephen Myers,et al.  High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice , 2012 .

[14]  Sang Jun Lee,et al.  Systematic study of different transitions in high operating temperature quantum dots in a well photodetectors , 2010 .

[15]  C. Besikci,et al.  High responsivity InP-InGaAs quantum-well infrared photodetectors: characteristics and focal plane array performance , 2005, IEEE Journal of Quantum Electronics.

[16]  J. Faist,et al.  Short wavelength (4μm) quantum cascade detector based on strain compensated InGaAs∕InAlAs , 2008 .

[17]  Hui C. Liu,et al.  Segregation of Si δ doping in GaAs‐AlGaAs quantum wells and the cause of the asymmetry in the current‐voltage characteristics of intersubband infrared detectors , 1993 .

[18]  Capasso,et al.  Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells. , 1994, Physical review. B, Condensed matter.

[19]  Lester F. Eastman,et al.  GaN/AlN-based quantum-well infrared photodetector for 1.55 μm , 2003 .

[20]  H. Schneider,et al.  Influences of MBE growth processes on photovoltaic 3-5 /spl mu/m intersubband photodetectors , 1994 .

[21]  Bo Li,et al.  Midinfrared intersubband absorption in wide band gap II-VI ZnxCd1−xSe multiple quantum wells with metastable zincblende MgSe barriers , 2008 .

[22]  A. Shen,et al.  Room temperature and narrow intersubband electroluminescence from ZnCdSe/ZnCdMgSe quantum cascade laser structures , 2011 .

[23]  Daniel C. Wang,et al.  On the dark current noise of quantum well infrared photodetectors , 1994 .