Straintronic magneto-tunneling-junction based ternary content addressable memory

Straintronic magneto-tunneling junction (s-MTJ) switches, whose resistances are controlled with voltage-generated strain in the magnetostrictive free layer of the MTJ, are extremely energy-efficient switches that would dissipate a few aJ of energy during switching. Unfortunately, they are also relatively error-prone and have low resistance on/off ratio. This suggests that as computing elements, they are best suited for non-Boolean architectures. Here, we propose and analyze a ternary content addressable memory implemented with s-MTJs and some transistors. It overcomes challenges encountered by traditional all-transistor implementations, resulting in exceptionally high cell density.

[1]  Christopher S. Lynch,et al.  Generation of localized strain in a thin film piezoelectric to control individual magnetoelectric heterostructures , 2015 .

[2]  Jayasimha Atulasimha,et al.  Energy dissipation and error probability in fault-tolerant binary switching , 2012, Scientific Reports.

[3]  Mohammad Salehi Fashami,et al.  Magnetization dynamics, Bennett clocking and associated energy dissipation in multiferroic logic. , 2010, Nanotechnology.

[4]  Mamoru Nakanishi,et al.  Real-time CAM-based Hough transform algorithm and its performance evaluation , 2000, Machine Vision and Applications.

[5]  Csaba Andras Moritz,et al.  Architecting for Causal Intelligence at Nanoscale , 2015, Computer.

[6]  Jayasimha Atulasimha,et al.  An error-resilient non-volatile magneto-elastic universal logic gate with ultralow energy-delay product , 2014, Scientific Reports.

[7]  Souheil Nadri,et al.  Reducing error rates in straintronic multiferroic nanomagnetic logic by pulse shaping , 2015, Nanotechnology.

[8]  N. Kushiyama,et al.  A 1.6 GB/s DRAM with flexible mapping redundancy technique and additional refresh scheme , 1999, 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).

[9]  Christopher S. Lynch,et al.  Electrical control of a single magnetoelastic domain structure on a clamped piezoelectric thin film—analysis , 2014 .

[11]  Supriyo Bandyopadhyay,et al.  Complete magnetization reversal in a magnetostrictive nanomagnet with voltage-generated stress: A reliable energy-efficient non-volatile magneto-elastic memory , 2014 .

[12]  Mamoru Nakanishi,et al.  On using the CAM concept for parametric curve extraction , 2000, IEEE Trans. Image Process..

[13]  Jayasimha Atulasimha,et al.  Hybrid spintronics and straintronics: A magnetic technology for ultra low energy computing and signal processing , 2011, 1101.2222.

[14]  M. Takahashi,et al.  In situ heat treatment of ultrathin MgO layer for giant magnetoresistance ratio with low resistance area product in CoFeB/MgO/CoFeB magnetic tunnel junctions , 2008 .

[15]  Supriyo Bandyopadhyay,et al.  Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, extremely low energy straintronic memory , 2015, Scientific Reports.

[16]  D. Kudithipudi,et al.  On estimation of static power-peformance in TCAM , 2008, 2008 51st Midwest Symposium on Circuits and Systems.

[17]  Nen-Fu Huang,et al.  Design of multi-field IPv6 packet classifiers using ternary CAMs , 2001, GLOBECOM'01. IEEE Global Telecommunications Conference (Cat. No.01CH37270).

[18]  Csaba Andras Moritz,et al.  Self-Similar Magneto-Electric Nanocircuit Technology for Probabilistic Inference Engines , 2015, IEEE Transactions on Nanotechnology.

[19]  Jayasimha Atulasimha,et al.  Dynamic Error in Strain-Induced Magnetization Reversal of Nanomagnets Due to Incoherent Switching and Formation of Metastable States: A Size-Dependent Study , 2016, IEEE Transactions on Electron Devices.

[20]  Yan Liu,et al.  Electric Field Manipulation of Magnetization Rotation and Tunneling Magnetoresistance of Magnetic Tunnel Junctions at Room Temperature , 2014, Advanced materials.

[21]  Avik W. Ghosh,et al.  Switching of Dipole Coupled Multiferroic Nanomagnets in the Presence of Thermal Noise: Reliability of Nanomagnetic Logic , 2013, IEEE Transactions on Nanotechnology.

[22]  G.E. Moore,et al.  Cramming More Components Onto Integrated Circuits , 1998, Proceedings of the IEEE.

[23]  Zhengyang Zhao,et al.  Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology , 2016 .

[24]  Jayasimha Atulasimha,et al.  Magnetization dynamics, throughput and energy dissipation in a universal multiferroic nanomagnetic logic gate with fan-in and fan-out , 2011, Nanotechnology.

[25]  Supriyo Bandyopadhyay,et al.  Experimental Clocking of Nanomagnets with Strain for Ultralow Power Boolean Logic. , 2014, Nano letters.

[26]  Supriyo Datta,et al.  Modular Approach to Spintronics , 2015, Scientific Reports.

[27]  Supriyo Bandyopadhyay,et al.  Energy dissipation and switching delay in stress-induced switching of multiferroic nanomagnets in the presence of thermal fluctuations , 2011, 1111.6129.

[28]  Sethuraman Panchanathan,et al.  A content-addressable memory architecture for image coding using vector quantization , 1991, IEEE Trans. Signal Process..

[29]  K. Pagiamtzis,et al.  Content-addressable memory (CAM) circuits and architectures: a tutorial and survey , 2006, IEEE Journal of Solid-State Circuits.

[30]  Jayasimha Atulasimha,et al.  Binary switching in a ‘symmetric' potential landscape , 2011, Scientific Reports.