论文信息 - Through-Silicon Via process module with backside metallization and redistribution layer within a 130 nm SiGe BiCMOS technology - 字舞流文

Through-Silicon Via process module with backside metallization and redistribution layer within a 130 nm SiGe BiCMOS technology

M. Kaynak | D. Wolansky | A. Göritz | M. Wietstruck | A. Mai | M. Fraschke | M. Lisker | S. Marschmeyer | A. Krüger | P. Kulse | M. Inac | T. Voß