Phase-Delay Cold-FET Pre-Distortion Linearizer for Millimeter-Wave CMOS Power Amplifiers

A phase-delay cold-FET pre-distortion linearizer technique is proposed to improve the gain compensation ability compared with the conventional cold-FET pre-distortion linearizer. The gain expansion analysis of the power amplifier (PA) cascading with a pre-distortion linearizer and the comparison with the conventional linearizer and the proposed phase-delay linearizer are provided in this paper. To demonstrate the feasibility of this concept, a single-ended V-band cascode PA with the 90° phase-delay linearizer and a differential K-band common-source PA with the 180° phase-delay linearizer are developed to verify the characteristics. The V-band PA implemented in 90-nm CMOS process exhibits the output 1-dB compression power (OP1 dB) of 13.7 dBm and the power-added efficiency (PAE) at OP1 dB of 14.3%. The K-band PA implemented in 0.18-μm CMOS process demonstrates 17.5-dBm OP1 dB and 13.6% PAE at OP1 dB.

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