论文信息 - Experimental characterization of CMOS APS imagers designed using two different technologies

Experimental characterization of CMOS APS imagers designed using two different technologies

This paper presents measurements results performed on CMOS APS imagers implemented on two different technologies. Both PhotoMOS (PM) and PhotoDiode (PD) structures have been designed by the CIMI-SUPAERO group and high APS readout rate measurements have been performed by Matra Marconi Space. Every circuit also includes the pixel's address decoders and the readout circuit required to perform on-chip correlated double sampling and double delta sampling. The aim of this paper is to compare performances of those arrays operating at 5 Volts in terms of dark current, quantum efficiency, conversion gain, dynamic range.

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