A low operating power FinFET transistor module featuring scaled gate stack and strain engineering for 32/28nm SoC technology
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Min Cao | Feng Yuan | Tsung-Lin Lee | Chih-Hao Chang | Tzu-Chiang Chen | Chih-Sheng Chang | Shyue-Shyh Lin | Hsien-Chin Lin | Hun-Jan Tao | Hung-Ta Lin | Chih-Chieh Yeh | Chia-Cheng Ho | Chang-Yun Chang | Shu-Ting Yang | Hong-Nien Lin | Ming-Feng Shieh | Chia-Pin Lin | Clement Wann | Chia-Cheng Chen | Wei-Hsiung Tseng | Li-Shyue Lai | Tsu-Hsiu Perng | Liang-Gi Yao | Ta-Ming Kuan | Jeff J. Xu | Ting-Chu Ko | Neng-Kuo Chen | Shih-Cheng Chen | Ching-Yu Chan | Jyh-Cheng Sheu | Chu-Yun Fu | Shih-Ting Hung | Chia-Feng Hu | Chia-Pin Lin | C. Wann | C. Fu | M. Cao | Chang-Yun Chang | Tsung-Lin Lee | L. Lai | C. Yeh | Chih-Sheng Chang | C. Ho | F. Yuan | C. Hu | Shih-Ting Hung | Hsien-Chin Lin | Shyue-Shyh Lin | M. Shieh | H. Tao | Jeff J. Xu | T. Kuan | Hong-Nien Lin | W. Tseng | T. Perng | L. Yao | Chia-Cheng Chen | Tzu-Chiang Chen | Chih-Hao Chang | T. Ko | N. Chen | Shih-Cheng Chen | Ching-Yu Chan | H.T. Lin | Shu-Ting Yang | J.C. Sheu
[1] R. Degraeve,et al. Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions , 2006, IEEE Transactions on Electron Devices.